Title :
10 Gbit/s bipolar laser driver
Author :
Banu, Mihai ; Jalali, Bahram ; Nottenburg, R. ; Humphrey, D.A. ; Montgomery, R.K. ; Hamm, R.A. ; Panish, M.B.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
A 10 Gbit/s bipolar laser driver fabricated in InP-InGaAs HBT technology is reported. Typically, the circuit delivers 100 mA of modulation current and 50 mA of DC current with less than 1 W power dissipation. Low jitter and fast rise and fall times are responsible for a clean output eye pattern.
Keywords :
III-V semiconductors; bipolar integrated circuits; digital communication systems; driver circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; laser accessories; optical communication equipment; optical modulation; semiconductor junction lasers; 1 W; 10 Gbit/s; 100 mA; 50 mA; DC current; HBT technology; InP-InGaAs; bipolar laser driver; modulation current; optical fibre links; output eye pattern; power dissipation; semiconductor laser driver;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910177
