Title :
Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs
Author :
Titus, J.L. ; Wheatley, C.F. ; Allenspach, M. ; Schrimpf, D. ; Burton, D.I. ; Brews, J.R. ; Galloway, K.F. ; Pease, R.L.
Author_Institution :
Naval Surface Warfare Center, Crane, IN, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
For the first time, experimental observations and numerical simulations show that the impact energy of the test ion influences the single-event gate rupture (SEGR) failure thresholds of vertical power MOSFETs. Current testing methodology may produce false hardness assurance
Keywords :
failure analysis; ion beam effects; power MOSFET; semiconductor device testing; SEGR failure threshold; hardness assurance testing; ion beam energy; numerical simulation; single-event gate rupture; vertical power MOSFET; Conducting materials; Cranes; Ion beams; Laboratories; MOSFETs; Silicon; Substrates; Testing; Two dimensional displays; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
