Title :
SEGR response of a radiation-hardened power MOSFET technology
Author :
Wheatley, C. Frank ; Titus, Jeffrey L. ; Burton, Donald I. ; Carley, Donald R.
Author_Institution :
Drums, PA, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
SEGR response curves are presented for eighteen different device types of radiation-hardened power MOSFETs. Comparisons are made to demonstrate the technology´s insensitivity to die size, rated blocking voltage, channel conductivity, and temperature. From this data, SEGR cross-sectional area curves are inferred
Keywords :
failure analysis; ion beam effects; power MOSFET; radiation hardening (electronics); semiconductor device reliability; SEGR cross-sectional area curves; SEGR response; channel conductivity; die size; power MOSFET technology; radiation-hardened MOSFET technology; rated blocking voltage; temperature dependency; Circuit testing; Computerized monitoring; MOSFET circuits; Power MOSFET; Power systems; Road transportation; Switches; System testing; Temperature distribution; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
