Title :
Monolithic 3-D Integration of SRAM and Image Sensor Using Two Layers of Single-Grain Silicon
Author :
Derakhshandeh, Jaber ; Golshani, Negin ; Ishihara, Ryoichi ; Mofrad, Mohammad Reza Tajari ; Robertson, Michael ; Morrison, Thomas ; Beenakker, C.I.M.
Author_Institution :
Lab. of Electron. Components, Technol. & Mater., Delft Univ. of Technol., Delft, Netherlands
Abstract :
In this paper, we report monolithic integration of two single-grain silicon layers for static random access memory (SRAM) and image sensor applications. A 12 × 28 silicon lateral photodiode array with a 25-μm pixel size prepared on top of a three-transistor readout circuit with individual outputs for every pixel is demonstrated. 6T SRAM cells with two layers of stacked transistors were prepared to compare the performance and area of each cell in different configurations.
Keywords :
SRAM chips; detector circuits; elemental semiconductors; image sensors; integrated optoelectronics; photodiodes; readout electronics; silicon; three-dimensional integrated circuits; SRAM; Si; image sensor; lateral photodiode array; monolithic 3D integration; readout circuit; single grain silicon layer; static random access memory; Image sensors; Logic gates; MOSFETs; Photodiodes; Random access memory; Silicon; 3-D integrated circuits (3-DICs); 6T SRAM cells; Excimer laser crystallization; image sensors; monolithic integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2163720
