Title :
Radiation effect characterization and test methods of single-chip and multi-chip stacked 16 Mbit DRAMs
Author :
LaBel, Kenneth A. ; Gates, Michele M. ; Moran, Amy K. ; Kim, Hak S. ; Seidleck, Christina M. ; Marshall, Paul ; Kinnison, James ; Carkhuff, Bliss
Author_Institution :
NASA Goddard Space Flight Center, Greenbelt, MD, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
This paper presents radiation effects characterization performed by the NASA Goddard Space Flight Center (GSFC) on spaceflight candidate 16 Mbit DRAMs. This includes heavy ion, proton, and Co60 irradiations on single-chip devices as well as proton irradiation of a stacked DRAM module. Lastly, a discussion of test methodology is undertaken
Keywords :
DRAM chips; gamma-ray effects; integrated circuit testing; ion beam effects; proton effects; space vehicle electronics; 16 Mbit; NASA Goddard Space Flight Center; heavy ion irradiation; multi-chip stacked DRAMs; proton irradiation; radiation effects characterization; single-chip DRAM; spaceflight candidate dynamic RAMs; stacked DRAM module; test methodology; test methods; Laboratories; NASA; National electric code; Packaging; Performance evaluation; Protons; Radiation effects; Random access memory; Space vehicles; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
