DocumentCode :
1319303
Title :
28 Gbit/s selector IC using AlGaAs/GaAs HBTs
Author :
Ichino, H. ; Yamauchi, Y. ; Ni Hono, T. ; Nagata, K. ; Nakajima, 0.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Volume :
27
Issue :
8
fYear :
1991
fDate :
4/11/1991 12:00:00 AM
Firstpage :
636
Lastpage :
637
Abstract :
An ultra-high-speed selector IC has been developed for future optical transmission systems. The IC was fabricated with AlGaAs/GaAs HBT technology, for which the fT is about 70 GHz. It operates at 28 Gbit/s with an output voltage swing of 1 Vp-p. This is the fastest operating speed ever reported for a selector IC using any technology.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; integrated logic circuits; multiplexing equipment; optical communication equipment; time division multiplexing; 28 Gbit/s; 70 GHz; AlGaAs-GaAs; AlGaAs/GaAs HBT technology; MUX; cutoff frequency; operating speed; optical transmission systems; output voltage swing; time division multiplexers; ultra-high-speed selector IC;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910399
Filename :
83280
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1319303
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