DocumentCode :
1319338
Title :
Narrow-linewidth strained-layer 1.5 mu m multiquantum well distributed feedback lasers
Author :
Wang, S.J. ; Twu, Y. ; Tanbunek, T. ; Logan, R.A. ; Dutta, N.K. ; Piccirilli, A.B.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Volume :
27
Issue :
8
fYear :
1991
fDate :
4/11/1991 12:00:00 AM
Firstpage :
645
Lastpage :
647
Abstract :
The performance characteristics of narrow-linewidth strained-layer 1.5 mu m multi-quantum-well distributed feedback (MQW-DFB) lasers are presented. Measured linewidth as low as 3.5 MHz has been observed for one of the 250 mu m long devices at 14.4 mW output. Under 1.7 Gbit/s 1.0, 1.0, . . . pattern signal modulation, the lasers have 20 dB down full width chirp in the range of 5-6 AA for the off state at 0.8 Ith. The chirp widths are about half of those of bulk-active DFB lasers. A 1.7 Gbit/s amplitude-shift-keying transmission experiment using one of the low-chirp lasers has been demonstrated. The transmission over 60 km of standard fibre only result in a 0.8 dB dispersion power penalty and has a receiver sensitivity of -36.2 dBm at BER=10-9.
Keywords :
III-V semiconductors; amplitude modulation; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; semiconductor junction lasers; spectral line breadth; 1.5 micron; 1.7 Gbit/s; 14.4 mW; InGaAsP-InGaAs; amplitude-shift-keying transmission experiment; chirp widths; dispersion power penalty; multiquantum well distributed feedback lasers; narrow-linewidth; pattern signal modulation; performance characteristics; receiver sensitivity; strained layer structure;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910405
Filename :
83286
Link To Document :
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