Title :
Linear tunable resistance circuit using gallium arsenide MESFETs
Author :
Toumazou, Christofer ; Haigh, D.G.
Author_Institution :
Imperial Coll. of Sci. & Technol. & Med., London, UK
fDate :
4/11/1991 12:00:00 AM
Abstract :
Designs for linearised, linearly tunable grounded and floating resistance circuits using GaAs depletion-mode MESFETs are presented. Simulations confirm good linearity and admittance characteristics up to 10 GHz. Applications include tunable filters, oscillators and high-precision amplifier loads.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; solid-state microwave circuits; tuning; 10 GHz; GaAs; SHF; admittance characteristics; depletion-mode MESFETs; high-precision amplifier loads; linearly tunable grounded configuration; oscillators; tunable filters; tunable resistance circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910411
