Title :
Optical switching in an asymmetric Fabry-Perot with high contrast ratio and very low insertion loss
Author :
Moloney, M.H. ; Hegarty, J. ; Roberts, Jeffrey S.
fDate :
4/11/1991 12:00:00 AM
Abstract :
All-optical switching in a normally-off asymmetric Fabry-Perot etalon is reported. The switching action is based on optically induced absorption and refractive index changes in a GaAs-AlGaAs multiple quantum well. A high switching contrast ratio with a very low associated insertion loss is obtained.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; optical losses; optical saturable absorption; optical switches; refractive index; semiconductor quantum wells; GaAs-AlGaAs; MQW; asymmetric Fabry-Perot etalon; high contrast ratio; low insertion loss; multiple quantum well; optical switching; optically induced absorption; refractive index changes; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910413
