Title :
20 Gbit/s AlGaAs/GaAs-HBT 2:1 selector and decision ICs
Author :
Hamano, H. ; Ihara, T. ; Amemiya, Isao
Author_Institution :
Fujitsu Labs. Ltd., Kawasaki, Japan
fDate :
4/11/1991 12:00:00 AM
Abstract :
A 2:1 selector and a decision IC have been fabricated using self-aligned AlGaAs/GaAs HBTs with a 2 mu m*5 mu m emitter having a cutoff frequency of 62 GHz and a maximum oscillation frequency of 108 GHz. Operation exceeding 20 Gbit/s was demonstrated with these ICs in 2:1 multiplexer and 1:2 demultiplexer experiments.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; multiplexing equipment; optical communication equipment; 108 GHz; 20 Gbit/s; 62 GHz; AlGaAs-GaAs; HBT IC; demultiplexer; digital IC; high-speed IC; multiplexer; optical receivers; optical transmitters; selector/decision IC; self-aligned devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910415
