Title :
Enhanced damage in bipolar devices at low dose rates: effects at very low dose rates
Author :
Johnston, A.H. ; Lee, C.I. ; Rax, B.G.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
The effect of very low dose rate irradiation is investigated for several linear bipolar devices that are sensitive to enhanced low dose-rate damage, including one device with super-β input transistors. New results are included at 0.001 and 0.002 rad(Si)/s. Irradiations at elevated temperature at high dose rate are compared with room temperature irradiation at very low dose rate. Possible mechanisms for enhanced damage are discussed
Keywords :
bipolar transistors; gamma-ray effects; radiation hardening (electronics); semiconductor device testing; space vehicle electronics; damage mechanisms; dose rates; elevated temperature irradiation; gamma-ray effects; linear bipolar devices; room temperature irradiation; space applications; super-β input transistors; Circuit synthesis; Circuit testing; Contracts; Fabrication; Laboratories; Manufacturing; Packaging; Propulsion; Space technology; Temperature sensors;
Journal_Title :
Nuclear Science, IEEE Transactions on
