Title :
Accurate charge control model for MODFET including subthreshold region
Author_Institution :
Dept. of Electron. Eng., Hong Kong Polytech., Hung Ham, Hong Kong
fDate :
4/11/1991 12:00:00 AM
Abstract :
A simple analytical model is proposed for the Fermi level as a function of the channel carrier density in a modulation doped FET (MODFET). It agrees well with numerical results including low carrier densities near the subthreshold region. The drain current is derived including drift and diffusion current, and the saturation drain current from the author´s model agrees well with experiment.
Keywords :
carrier density; high electron mobility transistors; semiconductor device models; Fermi level; HEMT; MODFET; channel carrier density; charge control model; diffusion current; drift current; modulation doped FET; saturation drain current; subthreshold region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910418
