Title :
Dose rate and total dose 1/f noise performance of GaAs heterojunction bipolar transistors
Author :
Hiemstra, David M.
Author_Institution :
SPAR Environ. Syst., Brampton, Ont., Canada
fDate :
12/1/1996 12:00:00 AM
Abstract :
GaAs heterojunction bipolar transistor 1/f noise performance is demonstrated to be unaffected by dose rate and total dose. This is believed to be due to shielding provided by the N+ collector from the GaAs substrate
Keywords :
1/f noise; III-V semiconductors; gallium arsenide; gamma-ray effects; heterojunction bipolar transistors; semiconductor device noise; 1/f noise; GaAs; dose rate; heterojunction bipolar transistor; total dose; FETs; Fusion reactors; Gallium arsenide; Heterojunction bipolar transistors; Inductors; Inspection; Neutrons; Silicon carbide; Testing; Working environment noise;
Journal_Title :
Nuclear Science, IEEE Transactions on
