• DocumentCode
    1319771
  • Title

    Dose rate and total dose 1/f noise performance of GaAs heterojunction bipolar transistors

  • Author

    Hiemstra, David M.

  • Author_Institution
    SPAR Environ. Syst., Brampton, Ont., Canada
  • Volume
    43
  • Issue
    6
  • fYear
    1996
  • fDate
    12/1/1996 12:00:00 AM
  • Firstpage
    3076
  • Lastpage
    3080
  • Abstract
    GaAs heterojunction bipolar transistor 1/f noise performance is demonstrated to be unaffected by dose rate and total dose. This is believed to be due to shielding provided by the N+ collector from the GaAs substrate
  • Keywords
    1/f noise; III-V semiconductors; gallium arsenide; gamma-ray effects; heterojunction bipolar transistors; semiconductor device noise; 1/f noise; GaAs; dose rate; heterojunction bipolar transistor; total dose; FETs; Fusion reactors; Gallium arsenide; Heterojunction bipolar transistors; Inductors; Inspection; Neutrons; Silicon carbide; Testing; Working environment noise;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.556907
  • Filename
    556907
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1319771