Title :
Radiation response of p-i-p diodes on diamond substrates of various type: electrical properties of semiconductor-insulator homojunctions
Author :
Denisenko, A. ; Fahrner, W.R. ; Strähle, U. ; Henschel, H. ; Job, R.
Author_Institution :
Dept. of Electr. Eng., Hagen Univ., Germany
fDate :
12/1/1996 12:00:00 AM
Abstract :
Double-junction p-i-p diodes are fabricated on natural and synthetic diamond crystals and polycrystalline CVD diamond films and subjected to γ, e- and neutron exposure. Parameters of the radiation induced defects (concentration and energy distribution of donor-like traps) are evaluated from the experimental I-V curves using a technique which is based on a model of thermionic injection of holes into the insulating diamond over p-i potential barrier. The evaluated parameters of the traps are used for 2-D numerical simulation of radiation effects on diamond based p-i(SiO2)-p solid state triode
Keywords :
diamond; electron beam effects; gamma-ray effects; neutron effects; semiconductor diodes; semiconductor-insulator-semiconductor devices; 2D numerical simulation; C; I-V characteristics; diamond crystal; diamond substrate; donor-like traps; double-junction p-i-p diode; electrical properties; electron exposure; gamma exposure; neutron exposure; polycrystalline CVD diamond film; potential barrier; radiation induced defects; semiconductor-insulator homojunction; solid state triode; thermionic hole injection; Boron; Dielectrics and electrical insulation; Electron traps; Photonic band gap; Schottky diodes; Semiconductor diodes; Space charge; Substrates; Tellurium; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
