Radiation response of p-i-p diodes on diamond substrates of various type: electrical properties of semiconductor-insulator homojunctions

Author

Denisenko, A. ; Fahrner, W.R. ; Strähle, U. ; Henschel, H. ; Job, R.

Author_Institution

Dept. of Electr. Eng., Hagen Univ., Germany

Volume

43

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

3081

Lastpage

3088

Abstract

Double-junction p-i-p diodes are fabricated on natural and synthetic diamond crystals and polycrystalline CVD diamond films and subjected to γ, e^- and neutron exposure. Parameters of the radiation induced defects (concentration and energy distribution of donor-like traps) are evaluated from the experimental I-V curves using a technique which is based on a model of thermionic injection of holes into the insulating diamond over p-i potential barrier. The evaluated parameters of the traps are used for 2-D numerical simulation of radiation effects on diamond based p-i(SiO₂)-p solid state triode

Keywords

diamond; electron beam effects; gamma-ray effects; neutron effects; semiconductor diodes; semiconductor-insulator-semiconductor devices; 2D numerical simulation; C; I-V characteristics; diamond crystal; diamond substrate; donor-like traps; double-junction p-i-p diode; electrical properties; electron exposure; gamma exposure; neutron exposure; polycrystalline CVD diamond film; potential barrier; radiation induced defects; semiconductor-insulator homojunction; solid state triode; thermionic hole injection; Boron; Dielectrics and electrical insulation; Electron traps; Photonic band gap; Schottky diodes; Semiconductor diodes; Space charge; Substrates; Tellurium; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.556908

Filename

556908