• DocumentCode
    1319790
  • Title

    Silicon Solar Cell With Integrated Tunnel Junction for Multijunction Photovoltaic Applications

  • Author

    Yang, Jingfeng ; Goguen, Jared ; Kleiman, Rafael

  • Author_Institution
    Dept. of Eng. Phys., McMaster Univ., Hamilton, ON, Canada
  • Volume
    33
  • Issue
    12
  • fYear
    2012
  • Firstpage
    1732
  • Lastpage
    1734
  • Abstract
    A silicon (Si) solar cell structure with an integrated Si tunnel junction (TJ) is proposed for multijunction (MJ) solar cell applications. The TJ is fabricated on top of an ordinary Si solar cell via the proximity rapid thermal diffusion process. The fabricated solar cells with integrated TJs show nondegraded photovoltaic characteristics. The electrical performance of the TJs allows for normal operation of Si-based MJ solar cells under at least 250-sun illumination and can be improved to achieve compatibility for higher illumination levels. The structure reported in this letter serves as a promising candidate for use as a bottom cell with an integrated TJ for low-cost and high-efficiency MJ solar cells.
  • Keywords
    diffusion; elemental semiconductors; photovoltaic effects; rapid thermal processing; silicon; solar cells; Si; bottom cell; electrical performance; high-efficiency MJ solar cell; integrated Si tunnel junction; integrated tunnel junction; low-cost MJ solar cell; multijunction photovoltaic application; multijunction solar cell application; nondegraded photovoltaic characteristics; rapid thermal diffusion process; silicon solar cell structure; Current density; Photovoltaic cells; Photovoltaic systems; Resistance; Silicon; Substrates; Multijunction (MJ) solar cell; photovoltaic; silicon (Si); tunnel junction (TJ);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2217391
  • Filename
    6332474