Title :
Radiation response of advanced commercial SRAMs
Author :
Lelis, Aivars J. ; Murrill, Steven R. ; Oldham, Timothy R. ; Robertson, Dale N. ; Manning, Monte
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
Total-dose tests have been performed on an advanced commercial 4-Mb static RAM (SRAM) that uses thin film p-channel transistors in a six-transistor (6-T) cell design in 0.35-μm technology. These results are compared with other results obtained on similar test structures and also with other results on commercial SRAMs using the more typical four-transistor, two-resistor (4-T) design
Keywords :
SRAM chips; gamma-ray effects; 0.35 micron; 4 Mbit; 6-T cell; SRAM; radiation response; thin film p-channel transistor; total dose; Alpha particles; Energy consumption; Laboratories; Manufacturing; Performance evaluation; Random access memory; Read-write memory; Resistors; Testing; Thin film transistors;
Journal_Title :
Nuclear Science, IEEE Transactions on
