Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches

Author

Moon, Taeho ; Jung, Ji-Chul ; Han, Yong ; Jeon, Youngin ; Koo, Sang-Mo ; Kim, Sangsig

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

Volume

59

Issue

12

fYear

2012

Firstpage

3288

Lastpage

3291

Abstract

The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped p-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.

Keywords

logic circuits; logic gates; memristors; nanowires; Si-based memristive switches; Si-nanowire-based memristive switches; crossbar-array architecture; external strain; flexible electronics; flexible logic circuit; flexible logic gates; heavily doped p-type Si; logic circuits; logic gate analysis; logic performances; top-down-fabricated Si nanowires; Junctions; Logic circuits; Logic gates; Optical switches; Silicon; Flexible electronics; Si nanowire (NW); logic gate; memristive switches; top-down approach;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2220778

Filename

6332494