Title :
The effects of radiation on MEMS accelerometers
Author :
Knudson, A.R. ; Buchner, S. ; McDonald, P. ; Stapor, W.J. ; Campbell, A.B. ; Grabowski, K.S. ; Knies, D.L. ; Lewis, S. ; Zhao, Y.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
Exposing just the mechanical part (sensor) of MEMS accelerometers to protons and heavy ions caused large changes in outputs representing the measured acceleration for the ADXL50 and very small changes for the ADXL04. The large voltage shift measured for the ADXL50 is attributed to charge generated by the ions and trapped in dielectric layers below the moveable mass. The trapped charge alters the electric field distribution which, in turn, changes the output voltage. The construction of the ADXL04 differs from that of the ADXL50 in that the dielectric layers are covered with a conducting polycrystalline silicon layer that effectively screens out the trapped charge, leaving the output voltage unchanged
Keywords :
accelerometers; elemental semiconductors; ion beam effects; ion beams; micromechanical devices; proton effects; silicon; MEMS accelerometers; Si; conducting polysilicon layer; dielectric layers; electric field distribution; heavy ion effects; output voltage; proton effects; trapped charge; voltage shift; Acceleration; Accelerometers; Current measurement; Dielectric measurements; Mechanical sensors; Mechanical variables measurement; Micromechanical devices; Protons; Sensor phenomena and characterization; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
