DocumentCode :
1319844
Title :
Electronic Conduction Mechanism in Atom Switch Using Polymer Solid Electrolyte
Author :
Sakamoto, Toshitsugu ; Tada, Munehiro ; Okamoto, Koichiro ; Hada, Hiromitsu
Author_Institution :
Low-Power Electron. Assoc. & Project, Tsukuba, Japan
Volume :
59
Issue :
12
fYear :
2012
Firstpage :
3574
Lastpage :
3577
Abstract :
Low-temperature characterization of electrical transport on atom switches has been performed to clarify operation and conducting mechanisms. The low resistive (ON) state (<; 400 Ω) shows metallic conduction accompanied with a high residual resistance. In the high resistive (OFF) state(>;108), the resistance exponentially increases with decreasing temperature due to Poole-Frenkel conduction. In the intermediate range (105 - 107 Ω), the resistance has small temperature dependence since the electron tunneling via Cu residues in a solid electrolyte is dominant. The polymer solid electrolyte enables the complete collection of the Cu residues without degrading the electrolyte, resulting in forming-free operation and a high on/off conductance ratio.
Keywords :
polymers; temperature; tunnelling; Cu residues; Poole-Frenkel conduction; atom switches; decreasing temperature; electrical transport; electron tunneling; electronic conduction mechanism; forming-free operation; high on/off conductance ratio; high residual resistance; low resistive state; low-temperature characterization; metallic conduction; polymer solid electrolyte; small temperature dependence; Dielectrics; Electrodes; Resistance; Switches; Temperature measurement; Tunneling; Atom switch; Coulomb blockade; Poole–Frenkel (P–F) emission; forming free; resistive RAM (ReRAM);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2219051
Filename :
6332498
Link To Document :
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