Title :
Surface-Potential-Based Drain Current Model for Long-Channel Junctionless Double-Gate MOSFETs
Author :
Chen, Zhuojun ; Xiao, Yongguang ; Tang, Minghua ; Xiong, Ying ; Huang, Jianqiang ; Li, Jiancheng ; Gu, Xiaochen ; Zhou, Yichun
Author_Institution :
Key Lab. of Low Dimensional Mater. & Applic. Technol., Xiangtan Univ., Xiangtan, China
Abstract :
A surface-potential-based model is developed for the symmetric long-channel junctionless double-gate MOSFET. The relationships between surface potential and gate voltage are derived from some effective approximations to Poisson´s equation for deep depletion, partial depletion, and accumulation conditions. Then, the Pao-Sah integral is carried out to obtain the drain current. It is shown that the model is in good agreement with numerical simulations from subthreshold to saturation region. Finally, we discuss the strengths and limitations (i.e., threshold voltage shifts) of the JLFET, which has been recently proposed as a promising candidate for the JFET.
Keywords :
MOSFET; Poisson equation; approximation theory; numerical analysis; semiconductor device models; surface potential; Pao-Sah integral; Poisson equation; accumulation conditions; approximation; deep depletion; drain current model; gate voltage; long-channel junctionless double-gate MOSFET; numerical simulations; partial depletion; surface-potential-based model; Electric potential; Impurities; Logic gates; Numerical models; Numerical simulation; Silicon; Threshold voltage; Double gate (DG); junctionless (JL) MOSFET; surface potential; threshold voltage shift;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2221164
