Title :
Total dose and proton damage in optocouplers
Author :
Rax, B.G. ; Lee, C.I. ; Johnston, A.H. ; Barnes, C.E.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
Radiation damage from gamma rays and protons is investigated for two types of optocouplers with different physical configurations. Far more damage occurs from protons because of displacement damage, which reduces the photoresponse of the phototransistor and causes severe degradation in LED light output for one of the two device types. The other device type was far more resistant to radiation, primarily because it used a shorter wavelength LED that was relatively unaffected by protons
Keywords :
opto-isolators; optoelectronic devices; proton effects; radiation hardening (electronics); LED light output; displacement damage; gamma rays; optocouplers; photoresponse; physical configurations; proton damage; total dose; Degradation; Gamma rays; Laboratories; Light emitting diodes; Optical coupling; Optical sensors; Optical surface waves; Phototransistors; Propulsion; Protons;
Journal_Title :
Nuclear Science, IEEE Transactions on
