Title :
The use of conversion model for CMOS IC prediction in space environments
Author :
Shvetzov-Shilovsky, I.N. ; Belyakov, V.V. ; Cherepko, S.V. ; Chumakov, A.I. ; Emelyanov, V.V. ; Pershenkov, V.S. ; Popov, M.Y. ; Zebrev, G.I.
Author_Institution :
Moscow Eng. Phys. Inst., Russia
fDate :
12/1/1996 12:00:00 AM
Abstract :
A physical model for total dose sensitive MOSFET parameters suitable for extrapolation of laboratory test results to the results expected in space environments is developed. With respect to models based on linear response theory it provides the expansion of properly described time and dose-rate ranges. This model can be shown to be a linear function of one specially built variable thus providing robust parameter fitting and precise extrapolation. The model is used for MOSFET prediction in low dose-rate irradiation environments
Keywords :
CMOS integrated circuits; MOSFET; X-ray effects; extrapolation; integrated circuit modelling; space vehicle electronics; CMOS IC prediction; conversion model; dose-rate ranges; extrapolation; irradiation environments; linear response theory; parameter fitting; space environments; time ranges; total dose sensitive MOSFET parameters; Annealing; CMOS integrated circuits; Circuit testing; Equations; Extrapolation; Integrated circuit modeling; MOSFET circuits; Predictive models; Semiconductor device modeling; Tunneling;
Journal_Title :
Nuclear Science, IEEE Transactions on
