Title :
Overcoming limitations of lumped MOS models
Author :
Aghdaie, Behnam ; Sheu, Bing
Author_Institution :
Avant! Corp., Fremont, CA, USA
fDate :
3/1/2000 12:00:00 AM
Abstract :
Describes, at a fundamental level, limitations of the lumped approach to model the transient fast signal (or RF) behavior of MOS devices. Specifically, we analyzed the transient behavior of the relaxation time lumped model. We discussed the pros and cons of a distributed approach as a more accurate (but computationally less efficient) alternative to a lumped model. In the process, we hope to have provided a deeper understanding of the strengths and weaknesses of the MOS transient models for RF applications
Keywords :
MOSFET; UHF field effect transistors; carrier relaxation time; microwave field effect transistors; semiconductor device models; transient analysis; RF behavior; distributed approach; lumped MOS models; relaxation time; transient behavior; transient fast signal; transient models; Circuit simulation; RF signals; Radio frequency; Signal analysis; Transient analysis; Voltage;
Journal_Title :
Circuits and Devices Magazine, IEEE
