DocumentCode
1320041
Title
Overcoming limitations of lumped MOS models
Author
Aghdaie, Behnam ; Sheu, Bing
Author_Institution
Avant! Corp., Fremont, CA, USA
Volume
16
Issue
2
fYear
2000
fDate
3/1/2000 12:00:00 AM
Firstpage
19
Lastpage
26
Abstract
Describes, at a fundamental level, limitations of the lumped approach to model the transient fast signal (or RF) behavior of MOS devices. Specifically, we analyzed the transient behavior of the relaxation time lumped model. We discussed the pros and cons of a distributed approach as a more accurate (but computationally less efficient) alternative to a lumped model. In the process, we hope to have provided a deeper understanding of the strengths and weaknesses of the MOS transient models for RF applications
Keywords
MOSFET; UHF field effect transistors; carrier relaxation time; microwave field effect transistors; semiconductor device models; transient analysis; RF behavior; distributed approach; lumped MOS models; relaxation time; transient behavior; transient fast signal; transient models; Circuit simulation; RF signals; Radio frequency; Signal analysis; Transient analysis; Voltage;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/101.833031
Filename
833031
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