Title :
Spin-Torque Driven Switching Probability Density Function Asymmetry
Author :
Zhao, Hui ; Zhang, Yisong ; Amiri, Pedram Khalili ; Katine, Jordan A. ; Langer, Juergen ; Jiang, Hongwen ; Krivorotov, Ilya N. ; Wang, Kang L. ; Wang, Jian-Ping
Author_Institution :
Electr. & Comput. Eng., Univ. of Minnesota, Minneapolis, MN, USA
Abstract :
We studied the spin transfer torque (STT) driven switching voltage distribution systematically by characterizing the switching probability density function (PDF) with large statistics (105 trials) across a wide time scale from 5 ns to 1 μs. The skew normal distribution function is found to be a good one to fit the measured switching PDF down to low values, which would be used as a guideline to extrapolate read disturb rate (RDR) and write error rate (WER) in STT-RAM design. Moreover, the asymmetry of switching probability density function is observed to flip when the pulse width decreases. It is related to the fluctuation mechanism transition from the thermal agitation to the initial magnetization trajectory dispersion.
Keywords :
integrated circuit design; magnetic tunnelling; magnetisation; magnetoelectronics; probability; random-access storage; PDF; RDR; STT-RAM design; WER; fluctuation mechanism transition; magnetic tunnel junction; magnetization trajectory dispersion; read disturb rate; skew normal distribution function; spin transfer torque driven switching voltage distribution; spin-torque driven switching probability density function asymmetry; thermal agitation; time 5 ns to 1 mus; write error rate; Junctions; Magnetic tunneling; Magnetization; Probability density function; Switches; Thermal stability; Torque; Magnetic tunnel junction; STT-RAM; spin transfer torque switching;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2012.2197815
