Title :
STT-RAM Cell Design Considering CMOS and MTJ Temperature Dependence
Author :
Bi, Xiuyuan ; Li, Hai ; Wang, Xiaobin
Author_Institution :
Polytech. Inst., New York Univ., Brooklyn, NY, USA
Abstract :
In spin-transfer torque random access memory (STT-RAM), the temperature fluctuations can significantly affect the characteristics of both electrical and magnetic devices. In this paper, we analyze their temperature dependence and investigate the impacts of temperature fluctuations on read and write operations. For the regular STT-RAM design working under 300 to 375 K, the sense margin in read operation can degrade about 25% and the write speed reduces around 20%. Furthermore, heating the MTJ to its Curie temperature can dramatically reduce the switching time to subnanosecond. And the design feasibility and implication are discussed in the paper.
Keywords :
CMOS memory circuits; magnetic storage; magnetic tunnelling; magnetoelectronics; random-access storage; CMOS process; Curie temperature; MTJ temperature dependence; STT-RAM cell design; electrical devices; magnetic devices; sense margin; spin-transfer torque random access memory; temperature 300 K to 375 K; temperature fluctuations; MOSFETs; Magnetic tunneling; Magnetization; Switches; Temperature dependence; Temperature sensors; Torque; Magnetoresistive devices; spin-transfer torque; spin-transfer torque random access memory (STT-RAM); temperature;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2012.2200469
