STT-RAM Cell Design Considering CMOS and MTJ Temperature Dependence

Author

Bi, Xiuyuan ; Li, Hai ; Wang, Xiaobin

Author_Institution

Polytech. Inst., New York Univ., Brooklyn, NY, USA

Volume

48

Issue

11

fYear

2012

Firstpage

3821

Lastpage

3824

Abstract

In spin-transfer torque random access memory (STT-RAM), the temperature fluctuations can significantly affect the characteristics of both electrical and magnetic devices. In this paper, we analyze their temperature dependence and investigate the impacts of temperature fluctuations on read and write operations. For the regular STT-RAM design working under 300 to 375 K, the sense margin in read operation can degrade about 25% and the write speed reduces around 20%. Furthermore, heating the MTJ to its Curie temperature can dramatically reduce the switching time to subnanosecond. And the design feasibility and implication are discussed in the paper.

Keywords

CMOS memory circuits; magnetic storage; magnetic tunnelling; magnetoelectronics; random-access storage; CMOS process; Curie temperature; MTJ temperature dependence; STT-RAM cell design; electrical devices; magnetic devices; sense margin; spin-transfer torque random access memory; temperature 300 K to 375 K; temperature fluctuations; MOSFETs; Magnetic tunneling; Magnetization; Switches; Temperature dependence; Temperature sensors; Torque; Magnetoresistive devices; spin-transfer torque; spin-transfer torque random access memory (STT-RAM); temperature;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2012.2200469

Filename

6332645