DocumentCode :
1320874
Title :
Wavelength selective detection using excitonic resonances in multiquantum-well structures
Author :
Goswami, Subrata ; Bhattacharya, Pallab ; Singh, Jasprit
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
27
Issue :
4
fYear :
1991
fDate :
4/1/1991 12:00:00 AM
Firstpage :
875
Lastpage :
877
Abstract :
The wavelength and voltage dependence of photocurrent near excitonic resonances are used to study the wavelength selectivity of p-i(multiple quantum well, or MQW)-n photodiode structures with a parallel sequence of optical bits, each with a different wavelength. The selectivity is considered good if the state of a λi wavelength bit can be detected regardless of λj(j i) state of the bits. Photocurrent is found to have very good selectivity only if λj bits are all zero, i.e., the optical information is serial, but it is also found that differential photocurrent (ΔIphV ) provides a good selectivity for random states of λj bits (i.e., parallel input). Four channel selectivity is demonstrated at 200 K. Specifically designed quantum-well structures can greatly improve this selectivity
Keywords :
excitons; p-i-n diodes; photodetectors; photodiodes; semiconductor quantum wells; 200 K; MQW; channel selectivity; excitonic resonances; multiple quantum well; multiquantum-well structures; optical bits; optical information; p-i-n photodiodes; parallel sequence; photocurrent; random states; semiconductors; voltage dependence; wavelength bit; wavelength dependence; wavelength selective detection; wavelength selectivity; Detectors; Displays; Molecular beam epitaxial growth; Optical filters; P-i-n diodes; PIN photodiodes; Photoconductivity; Resonance; Tunable circuits and devices; Voltage;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.83317
Filename :
83317
Link To Document :
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