DocumentCode
1320889
Title
Microwave potential of GaN-based Gunn devices
Author
Alekseev, E. ; Pavlidis, D.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
36
Issue
2
fYear
2000
fDate
1/20/2000 12:00:00 AM
Firstpage
176
Lastpage
178
Abstract
Transient hydrodynamic simulations are used to carry out harmonic power analysis of GaN and GaAs Gunn diode oscillators. GaN-based devices are shown to have twice the frequency and a hundred times the power capability of GaAs Gunn diodes
Keywords
Gunn diodes; Gunn oscillators; III-V semiconductors; gallium compounds; microwave diodes; microwave oscillators; semiconductor device models; wide band gap semiconductors; GaN; GaN-based Gunn devices; Gunn diode oscillators; harmonic power analysis; microwave potential; power capability; transient hydrodynamic simulations;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000200
Filename
833171
Link To Document