Title :
High-Efficiency Cells From Layer Transfer: A First Step Toward Thin-Film/Wafer Hybrid Silicon Technologies
Author :
Brendel, Rolf ; Petermann, Jan Hendrik ; Zielke, Dimitri ; Schulte-Huxel, Henning ; Kessler, Michael ; Gatz, Sebastian ; Eidelloth, Stefan ; Bock, Robert ; Rojas, Enrique Garralaga ; Schmidt, Jan ; Dullweber, Thorsten
Author_Institution :
Inst. for Solar Energy Res. Hamelin, Emmerthal, Germany
fDate :
7/1/2011 12:00:00 AM
Abstract :
Future low-cost Si photovoltaics shall combine the high-efficiency potential of ultrathin monocrystalline Si films with the low cost per area of the Si-thin-film photovoltaics. The literature describes various techniques for fabricating ultrathin monocrystalline Si films with no need for sawing wafers. Layer transfer using epitaxy on porous Si and subsequent layer separation is one option. We demonstrate an independently confirmed aperture efficiency of 19.1% for a 4-cm2-sized layer transfer cell with a thickness of 43 μm. This cell has a passivated emitter and rear contact structure with an Al2O3-surface passivation by atomic layer deposition and lasered contact openings. Highly efficient thin crystalline solar cells have to be integrated into modules. We also report on laser bonding of Si cells to a metalized carrier for module integration.
Keywords :
atomic layer deposition; elemental semiconductors; laser materials processing; passivation; semiconductor growth; semiconductor thin films; silicon; solar cells; Al2O3; Si-Al2O3; atomic layer deposition; laser bonding; lasered contact openings; layer transfer cell; passivation; rear contact structure; silicon thin film photovoltaics; size 43 micron; thin crystalline solar cells; Bonding; Epitaxial growth; Glass; Lasers; Passivation; Silicon; Aluminum oxide passivation; laser bonding; layer transfer; thin film/wafer hybrid;
Journal_Title :
Photovoltaics, IEEE Journal of
DOI :
10.1109/JPHOTOV.2011.2165529