DocumentCode
1321244
Title
Graphene: Its Fundamentals to Future Applications
Author
Moon, Jeong-Sun ; Gaskill, D. Kurt
Author_Institution
HRL Labs., Malibu, CA, USA
Volume
59
Issue
10
fYear
2011
Firstpage
2702
Lastpage
2708
Abstract
Currently, graphene is a topic of very active research fields from science to potential applications. For various RF circuit applications, including low-noise amplifiers, the unique ambipolar nature of graphene field-effect-transistors can be utilized for high-performance frequency multipliers, mixers, and high-speed radiometers. Potential integration of graphene on silicon substrates with CMOS compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene MOSFETs to minimize parasitics and improve gate modulation efficiency in the channel with zero or a small bandgap. In this paper, we highlight recent progress in graphene materials, devices, and circuits for RF applications. For passive RF applications, we show its transparent electromagnetic shielding in Ku-band and transparent antennas, where its success depends on the quality of materials. We also attempt to discuss future applications and challenges of graphene.
Keywords
CMOS analogue integrated circuits; MOSFET; electromagnetic shielding; frequency multipliers; graphene; low noise amplifiers; mixers (circuits); radiofrequency integrated circuits; silicon; C; CMOS compatibility; Ku-band; RF circuit; Si; frequency multipliers; graphene MOSFET; graphene field-effect-transistors; high-speed radiometers; low-noise amplifiers; mixers; silicon substrates; transparent antennas; transparent electromagnetic shielding; unique ambipolar nature; Epitaxial growth; Logic gates; MOSFETs; Radio frequency; Resistance; Silicon; Ambipolar; CMOS; RF; antenna; electromagnetic interference (EMI); field-effect transistor (FET); graphene; interconnects; low-noise amplifier (LNA); mixer; multiplier; nanoelectromechanical systems (NEMS); phase noise; radiometer; sensors; transistor;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2011.2164617
Filename
6019032
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