Title :
Finite-element calculation of the transmission probability and the resonant-tunneling lifetime through arbitrary potential barriers
Author :
Nakamura, Kenji ; Shimizu, Akira ; Koshiba, Masanori ; Hayata, Kazuya
Author_Institution :
Canon Inc., Kanagawa, Japan
fDate :
5/1/1991 12:00:00 AM
Abstract :
A numerical method for the calculation of the transmission probability through a potential barrier or structure and of the lifetime of a resonant state in a double- or multiple-barrier structure is presented. This method is based on a combination of the finite-element method and the analytical approach. A generalized boundary condition of the heterointerface is introduced by use of the interface matrix, and thus the method is applicable to the potential barriers made of arbitrary semiconductors. The validity of the method is confirmed by calculating the transmission probability of rectangular potential barriers and double barrier structures. Numerical results on sinusoidal barriers and voltage-applied barriers are also presented
Keywords :
finite element analysis; semiconductor junctions; tunnelling; arbitrary potential barriers; arbitrary semiconductors; double barrier structures; finite element calculation; finite-element method; generalized boundary condition; heterointerface; interface matrix; multiple-barrier structure; numerical method; rectangular potential barriers; resonant state; resonant-tunneling lifetime; sinusoidal barriers; transmission probability; voltage-applied barriers; Boundary conditions; Charge carrier processes; Effective mass; Finite element methods; Probability; Quantum wells; Resonance; Resonant tunneling devices; Transmission line matrix methods; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
