DocumentCode :
1321762
Title :
Enhanced Electric and Magnetic Properties of the Epitaxial ({\\rm Ba}_{0.5}{\\rm Sr}_{0.5}){\\rm TiO}_{3}/{\\rm BiFeO}_{3} Multiferroic Heterostructure
Author :
Chen, Y. ; Miao, J. ; Zhang, X. ; Weng, F. ; Xu, X.G. ; Qiao, L.J. ; Jiang, Y.
Author_Institution :
State Key Lab. for Adv. Metals & Mater., Univ. of Sci. & Technol. Beijing, Beijing, China
Volume :
48
Issue :
11
fYear :
2012
Firstpage :
3418
Lastpage :
3421
Abstract :
Multiferroic heterostructure (Ba0.5Sr0.5)TiO3(BST)/BiFeO3(BFO) have been deposited by pulsed laser deposition method. X-ray diffraction shows that the BFO and BST were epitaxial grown on La0.7Sr0.3MnO3-buffered (100) SrTiO3 substrate. Interestingly, the BST/BFO heterostructure exhibits improved ferroelectric and ferromagnetic behaviors with remnant polarization (2Pr) ~ 34.8 μC/cm2 and saturation magnetization (Ms) ~ 4.65 emu/cm3. Compared with the single BFO film, the BST/BFO heterostructure showed higher dielectric constant and lower dielectric loss. Furthermore, the leakage behaviors of the BST/BFO heterostructure were consistent with SCLC behavior at low electric-field region and PF emission at high electric-field region. Our result indicates the BST/BFO multiferroic heterostructure may be a promising material for the high-density memory application.
Keywords :
Poole-Frenkel effect; X-ray diffraction; barium compounds; bismuth compounds; buffer layers; dielectric losses; dielectric polarisation; electrical faults; ferroelectric thin films; ferromagnetic materials; magnetic epitaxial layers; magnetic multilayers; magnetisation; multiferroics; permittivity; pulsed laser deposition; strontium compounds; (Ba0.5Sr0.5)TiO3-BiFeO3-La0.7Sr0.3MnO3-SrTiO3; BST-BFO heterostructure; La0.7Sr0.3MnO3-SrTiO3; La0.7Sr0.3MnO3-buffered (100) SrTiO3 substrate; PF emission; Poole-Frenkel emission; SCLC behavior; X-ray diffraction; dielectric constant; dielectric loss; electric properties; electric-field region; epitaxial multiferroic heterostructure; ferroelectric behaviors; ferromagnetic behaviors; high-density memory application; leakage behaviors; magnetic properties; pulsed laser deposition; remnant polarization; saturation magnetization; space-charge-leakage-current; Dielectrics; Epitaxial growth; Leakage current; Magnetic hysteresis; Saturation magnetization; Substrates; Ferroelectric; ferromagnetic; leakage behaviors; multiferroic heterostructure;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2012.2200459
Filename :
6332854
Link To Document :
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