Title :
Reduction of Flicker Noise in AlGaN/GaN-Based HFETs After High Electric-Field Stress
Author :
Congyong Zhu ; Kayis, C. ; Mo Wu ; Xing Li ; Fan Zhang ; Avrutin, V. ; Ozgur, U. ; Morkoc, H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Commonwealth Univ., Richmond, VA, USA
Abstract :
We report on the evolution of AlGaN/GaN-based heterojunction field-effect transistor (HFET) operation under high-electric-field stress. Specifically, a 10 ~ 15 dB decrease in the flicker noise is observed after stress in contrast with what has been nominally observed and reported in the literature in the realm of direct-current characteristics. Gate lag measurements revealed a trap state with an activation energy of 0.20 eV in the pristine devices, which manifests itself as a generation-recombination peak in the flicker noise spectrum. This trap state becomes undetectable in gate lag and noise measurements after high-field stress. Analysis shows that the phenomena observed are consistent with the change of surface charge profile during high-electric-field stress.
Keywords :
III-V semiconductors; aluminium compounds; electric fields; flicker noise; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; HFET; activation energy; direct-current characteristic; electron volt energy 0.20 eV; flicker noise spectrum reduction; gate lag measurement; generation-recombination peak; heterojunction field-effect transistor; high electric-field stress; noise figure 10 dB to 15 dB; noise measurement; pristine device; surface charge profile; trap state; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Noise; Stress; AlGaN/GaN; gate lag; generation–recombination (G–R); heterostructure field-effect transistors (HFETs); hot-electron stress; noise measurement; reliability; traps;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2163921
