Title :
Reactive ion etching of III-V compounds using C2H6 /H2
Author :
Matsui, Takashi ; Sugimoto, Hiroshi ; Ohishi, T. ; Ogata, Hiroaki
Author_Institution :
Central Res. Lab., Mitsubishi Electr. Corp., Hyogo
fDate :
6/23/1988 12:00:00 AM
Abstract :
Reactive ion etching of InP, GaInAs and GaAs using a mixture of ethane and hydrogen, C2H6/H2, is demonstrated for the first time. It has been found that by choosing optimum etching parameters one can obtain excellent vertical sidewalls as well as very smooth surfaces, keeping the etching rate at a convenient value of 20-60 nm/min
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor technology; sputter etching; C2H6/H2; GaAs; GaInAs; H2; III-V compounds; InP; ethane; gas mixture; optimum etching parameters; reactive ion etching; semiconductors; vertical sidewalls;
Journal_Title :
Electronics Letters
