DocumentCode
1322076
Title
Illuminated ballistic camel diode: a new optoelectronic negative resistance device
Author
Lehovec, K.
Volume
24
Issue
13
fYear
1988
fDate
6/23/1988 12:00:00 AM
Firstpage
803
Lastpage
804
Abstract
An appropriately designed illuminated ballistic camel diode (IBCD) should exhibit a negative resistance range of its current/voltage characteristics by the decrease of temporarily trapped, photoelectrically released minority carriers with increasing applied voltage. Integration with a p -n light-emitting diode in a heterostructure provides a bistable memory element
Keywords
hole traps; light emitting diodes; minority carriers; negative resistance; optoelectronic devices; photoelectric devices; semiconductor diodes; semiconductor storage; LED; applied voltage; bistable memory element; current/voltage characteristics; heterostructure; illuminated ballistic camel diode; optoelectronic negative resistance device; p-n light-emitting diode; photoelectrically released minority carriers; semiconductor device; temporarily trapped carriers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8343
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