Title :
Optical detection up to 2.5 Gbit/s with a standard high-speed self-aligned silicon bipolar transistor
Author :
Bock, Wojtek J. ; Prettl, W.
Author_Institution :
Central Res. & Dev., Siemens AG, Munchen
fDate :
6/23/1988 12:00:00 AM
Abstract :
Recent progress in optical fibre communication has encouraged the development of fast and sensitive photodetectors. The photoresponse of the base-collector (BC) diode of a standard high-speed self-aligned silicon bipolar transistor was investigated, showing optical detection capabilities up to 2.5 Gbit/s
Keywords :
bipolar transistors; digital communication systems; elemental semiconductors; optical communication equipment; photodetectors; silicon; 2.5 Gbit/s; Si; base-collector diode; bipolar transistor; high-speed; optical detection capabilities; optical fibre communication; photodetectors; photoresponse; self-aligned; vertical n-p-n transistor;
Journal_Title :
Electronics Letters
