DocumentCode
1322160
Title
Gauge Factor Tuning, Long-Term Stability, and Miniaturization of Nanoelectromechanical Carbon-Nanotube Sensors
Author
Helbling, Thomas ; Roman, Cosmin ; Durrer, Lukas ; Stampfer, Christoph ; Hierold, Christofer
Author_Institution
Dept. of Mech. & Process Eng, ETH Zurich, Zurich, Switzerland
Volume
58
Issue
11
fYear
2011
Firstpage
4053
Lastpage
4060
Abstract
Integrated piezoresitive strain gauges are established transducers for measuring displacements in microelectromechanical systems (MEMS). Due to large gauge factors (GFs) and low power operation and nanometer dimensions, carbon nanotubes (CNTs) are ideal candidates for further downscaling strain-gauge-based MEMS devices. Here, we present zero-level packaged strain gauges based on individual single-walled CNTs in a field-effect transistor configuration, which can be utilized as long-term stable and tunable transducers for measuring membrane deflections in ultraminiaturized pressure sensors. The gate electrode allows adjusting GFs of nanotube strain gauges by almost a factor of 10. Studies on nanotube segments of different lengths show highly reproducible GFs along the same CNT. The zero-level packaged pressure sensors show stable GFs over a period of at least 14 months. This paper is an important step toward reliable nanoscaled strain gauges with many potential applications, such as ultraminiaturized pressure-sensitive membranes or cantilever-based transducers.
Keywords
carbon nanotubes; displacement measurement; electrochemical electrodes; field effect transistors; microsensors; nanosensors; piezoresistive devices; pressure sensors; pressure transducers; strain gauges; C; GF tuning; cantilever-based transducer; displacement measurement; field-effect transistor; gauge factor tuning; integrated piezoresistive strain gauge transducer; low power operation; membrane deflections measurement; microelectromechanical system; nanoelectromechanical carbon-nanotube sensor miniaturization; nanometer dimension; nanoscaled strain gauge; single-walled CNT; strain-gauge-based MEMS device; ultraminiaturized pressure-sensitive membrane; zero-level packaged pressure sensor; zero-level packaged strain gauge; Aluminum oxide; CNTFETs; Logic gates; Piezoresistance; Sensitivity; Sensors; Strain; Carbon nanotube (CNT); nanoelectromechanical system; pressure sensors; strain gauge;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2011.2165544
Filename
6020772
Link To Document