Title :
Double-interdigitated (TIL) bipolar transistor with heavily doped base wells
Author :
Silard, A.P. ; Nani, G.
Author_Institution :
Dept. of Electron., Polytech. Inst., bucharest
fDate :
6/23/1988 12:00:00 AM
Abstract :
The authors report the development of two interdigitation level (TIL) bipolar transistors with heavily-doped base wells (BW), having the following advantages in comparison with identical conventional devices: (a) an ~18% and ~23% increase of voltages VCEO(sus) and VCBO, respectively; (b) a reduction of the turn-on delay (t d) and rise times (tr) by a factor of ~20; and (c) a two-fold decrease of the fall time t f
Keywords :
bipolar transistors; elemental semiconductors; heavily doped semiconductors; semiconductor doping; semiconductor switches; silicon; Si; TIL device; bipolar transistor; heavily doped base wells; semiconductors; switching device; two interdigitation level;
Journal_Title :
Electronics Letters
