DocumentCode :
1322214
Title :
Monte Carlo simulations of repeated velocity overshoot structures
Author :
Beton, P.H. ; Long, A.P. ; Kelly, M.J. ; Matthews, P.M.
Author_Institution :
GEC Res. Ltd., Hirst Res. Centre, Wembley, UK
Volume :
24
Issue :
13
fYear :
1988
fDate :
6/23/1988 12:00:00 AM
Firstpage :
817
Lastpage :
818
Abstract :
The authors have performed self-consistent Monte Carlo simulations on repeated velocity overshoot structures. From their calculations, they assess the potential of such structures to enhance the average drift velocity of electrons. It is found that there is no enhancement for uniformly doped structures. For spike-doped structures there is a small enhancement, but this is gained at the expense of a drop in current density. In both structures the velocity enhancement is limited by intervalley scattering
Keywords :
Monte Carlo methods; doping profiles; semiconductor device models; Monte Carlo simulations; average electron drift velocity; current density; intervalley scattering; repeated velocity overshoot structures; spike-doped structures; uniformly doped structures; velocity enhancement;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
Filename :
8353
Link To Document :
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