• DocumentCode
    1322333
  • Title

    Semiconductor-diode light sources

  • Author

    Lorenz, M.R. ; Pilkuhn, M.H.

  • Author_Institution
    International Business Machines Corporation
  • Volume
    4
  • Issue
    4
  • fYear
    1967
  • fDate
    4/1/1967 12:00:00 AM
  • Firstpage
    87
  • Lastpage
    96
  • Abstract
    Electroluminescence can occur as a result of the application of a direct current at a low voltage to a suitably doped crystal containing a p-n junction. It has become apparent in recent years that in certain materials (such as gallium arsenide) and under certain conditions, the efficiency of conversion of electric energy into light can be remarkably high. Since these semiconductor light sources operate at low voltages and low currents and can be made very small, they appear attractive for use in small optical displays. Because they can be switched very rapidly and have fairly monochromatic emission properties, their applications for data transmission are also promising.
  • Keywords
    Crystalline materials; Displays; Electroluminescence; Gallium arsenide; Light sources; Low voltage; Optical materials; P-n junctions; Semiconductor materials; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1967.5216310
  • Filename
    5216310