DocumentCode
1322333
Title
Semiconductor-diode light sources
Author
Lorenz, M.R. ; Pilkuhn, M.H.
Author_Institution
International Business Machines Corporation
Volume
4
Issue
4
fYear
1967
fDate
4/1/1967 12:00:00 AM
Firstpage
87
Lastpage
96
Abstract
Electroluminescence can occur as a result of the application of a direct current at a low voltage to a suitably doped crystal containing a p-n junction. It has become apparent in recent years that in certain materials (such as gallium arsenide) and under certain conditions, the efficiency of conversion of electric energy into light can be remarkably high. Since these semiconductor light sources operate at low voltages and low currents and can be made very small, they appear attractive for use in small optical displays. Because they can be switched very rapidly and have fairly monochromatic emission properties, their applications for data transmission are also promising.
Keywords
Crystalline materials; Displays; Electroluminescence; Gallium arsenide; Light sources; Low voltage; Optical materials; P-n junctions; Semiconductor materials; Stimulated emission;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.1967.5216310
Filename
5216310
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