DocumentCode :
1322361
Title :
Preparation of CoPt-Alloy Thin Films With Perpendicular Magnetic Anisotropy on MgO(111), 
, and  alloy thin films are prepared on MgO(111), SrTiO<sub>3</sub>(111), and Al<sub>2</sub>O<sub>3</sub>(0001) single-crystal substrates by ultra-high vacuum radio-frequency magnetron sputtering by varying the substrate temperature from room temperature to 600°C . Effects of substrate material and substrate temperature on the crystallographic and magnetic properties are investigated. CoPt-alloy epitaxial thin films with the close-packed plane parallel to the substrate surface are obtained on MgO and SrTiO<sub>3</sub> substrates. On Al<sub>2</sub>O<sub>3</sub> substrates, CoPt epitaxial films are obtained at temperatures higher than 500°C, whereas CoPt films consisting of epitaxial and polycrystalline crystals are formed below 400°C. From the view points of order degree and stacking sequence of close-packed plane along the perpendicular direction, the crystal structure is determined. <i>L</i>1<sub>1</sub> ordered phase is preferentially formed and is stabilized around 300°C for all the employed substrate materials. A higher order degree is observed for the films prepared on MgO >; SrTiO<sub>3</sub> >; Al<sub>2</sub>O<sub>3</sub>. The magnetic properties are influenced by the crystal structure and the order degree.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>cobalt alloys; crystal structure; magnetic epitaxial layers; metallic epitaxial layers; perpendicular magnetic anisotropy; platinum alloys; sputter deposition; Al<sub>2</sub>O<sub>3</sub>; Al<sub>2</sub>O<sub>3</sub>(0001) single-crystal substrates; CoPt; MgO; MgO(111) single-crystal substrates; SrTiO<sub>3</sub>; SrTiO<sub>3</sub>(111) single-crystal substrates; close-packed plane; crystal structure; crystallographic properties; epitaxial thin films; magnetic properties; perpendicular direction; perpendicular magnetic anisotropy; stacking sequence; substrate temperature; temperature 293 K to 600 degC; ultrahigh vacuum radio-frequency magnetron sputtering; Crystals; Epitaxial growth; Metals; Stacking; Substrates; Temperature; X-ray scattering; <formula formulatype=)
$L1_{1}$ ordered phase; CoPt-alloy thin film; epitaxial growth; oxide single-crystal substrate;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2012.2201216
Filename :
6332946
Link To Document :
