Title :
GaInAsP/InP single-quantum-well (SQW) laser with wire-like active region towards quantum wire laser
Author :
Cao, Ming ; Miyamoto, Yutaka ; Miyake, Yousuke ; Nogiwa, S. ; Arai, Shigehisa ; Furuya, Keiichi ; Suematsu, Yasuharu
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol.
fDate :
6/23/1988 12:00:00 AM
Abstract :
Lasing operating of a GaInAsP/InP single-quantum-well laser with very narrow (0.12 μm) wire-like active region was obtained for the first time under CW condition at 77 K. It was fabricated by a two-step organometallic vapour phase epitaxy (OMVPE) and wet chemical etching process. The threshold current density of the laser was 810 A/cm2 . This lasing operation with such a narrow active region indicates that the technique employed here would be suitable for realising a higher-dimensional quantum-well laser, such as quantum wire and box lasers
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; vapour phase epitaxial growth; 0.12 micron; 77 K; CW condition; GaInAsP-InP; III-V semiconductors; SQW; narrow active region; organometallic vapour phase epitaxy; quantum box laser; quantum wire laser; semiconductor lasers; single-quantum-well; threshold current density; two step OMVPE process; wet chemical etching; wire-like active region;
Journal_Title :
Electronics Letters
