Title :
Feasibility of picosecond electrical sampling using GaAs FET
Author :
Hafdallah, Habiba ; Ouslimani, Achour ; Adde, Robert ; Vernet, Guy ; CROZAT, PAUL
Author_Institution :
Equipe Microonde, Ecole Nat. Superieure d´´Electron. et de ses Appl., Cergy-Pontoise, France
fDate :
2/1/2000 12:00:00 AM
Abstract :
A fully MESFET hybrid sampling system has been built and tested. The circuit includes an FET sampling gate, an FET sampling pulse generator, and an FET test step generator. These functions have been studied separately using a large-signal model and picosecond instrumentation. The parameters of each of them are optimized to obtain the best performances. Measurements with the GaAs FET sampler are performed and a time-domain resolution better than 28 ps corresponding to a bandwidth of 12 GHz is obtained. In particular, the measurements performed on the MESFET sampling system are in good agreement with those obtained on the conventional S4 reference sampling head
Keywords :
III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; equivalent circuits; field effect MMIC; field effect transistor switches; gallium arsenide; high-speed integrated circuits; pulse generators; pulse shaping circuits; time bases; time-domain analysis; transient response; 12 GHz; FET sampling gate; FET sampling pulse generator; FET test step generator; GaAs; MESFET hybrid sampling system; MESFET sampling switches; MMIC structure; circuit modelling; equivalent circuit; high-speed electronics; large-signal model; on-wafer sampling; picosecond electrical sampling; picosecond instrumentation; pulse shaping circuit; pulse shortener; step sharpener; time-domain resolution; timebase; transient response; Circuit testing; FETs; Gallium arsenide; Instruments; MESFETs; Performance evaluation; Pulse generation; Sampling methods; System testing; Time domain analysis;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
