• DocumentCode
    1323153
  • Title

    Electrical Characteristics of Ultrathin Atomic Layer Deposited \\hbox {TiO}_{2} and \\hbox {Al}_{2}\\hbox</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Lee, Ming-Kwei ; Yen, Chih-Feng ; Yang, Sheng-Hsiung</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>58</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>11</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2011</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>3885</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>3889</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Amorphous TiO<sub>2</sub> film of 5 nm prepared by atomic layer deposition (ALD) on ammonium-sulfide-treated p-type InP shows good interface but slightly higher leakage current mainly from thermionic emission. With a high-bandgap amorphous Al<sub>2</sub>O<sub>3</sub> of 3 nm prepared also by ALD on TiO<sub>2</sub>, the leakage currents are improved to 3.1 × 10<sup>-9</sup> and 3.3 × 10<sup>-7</sup> A/cm<sup>2</sup> at ±2.5 MV/cm. The dielectric constant is about 17.8. The lowest interface state density is around 6.7 × 10<sup>11</sup> cm<sup>-2</sup> eV<sup>-1</sup>.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>III-V semiconductors; MOSFET; alumina; amorphous semiconductors; atomic layer deposition; high-k dielectric thin films; indium compounds; interface states; leakage currents; permittivity; thermionic emission; titanium compounds; (NH<sub>4</sub>)S<sub>x</sub>-InP; Al<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub>; TiO<sub>2</sub>; dielectric constant; electrical characteristics; high-bandgap amorphous film; interface state density; leakage current; stacked dielectrics; thermionic emission; ultrathin atomic layer deposition; Aluminum oxide; Capacitance; Dielectrics; Educational institutions; Indium phosphide; Leakage current; Thermionic emission; <formula formulatype=$(hbox{NH}_{4})_{2}hbox{S}_{x}$; $hbox{Al}_{2}hbox{O}_{3}$; $hbox{TiO}_{2}$; atomic layer deposition (ALD); indium phosphide (InP);

  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2164544
  • Filename
    6021360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1323153