Title :
High power InGaAs/GaAsP/lnGaP surface emitting laser
Author :
Tayahi, M.B. ; Dutta, N.K. ; Hobson, W.S. ; Vakhshoori, D. ; Lopata, J. ; Wynn, J.
Author_Institution :
Dept. of Phys., Connecticut Univ., Storrs, CT, USA
fDate :
10/9/1997 12:00:00 AM
Abstract :
The fabrication and performance characteristics of a vertical cavity surface emitting laser design which uses lateral current injection for low resistance and lateral oxidation for carrier confinement is described. The 4 μm diameter devices have a threshold current of ~1.5 mA and emit few mW. The 50 μm diameter devices have a threshold current of ~200 mA and emit ~250 mW in a single wavelength. The lasers emit at near 1 μm
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; oxidation; quantum well lasers; semiconductor laser arrays; surface emitting lasers; 1 mum; 1.5 mA; 200 mA; 250 mW; 4 micron; 50 micron; III-V semiconductors; InGaAs-GaAsP-InGaP; carrier confinement; lateral current injection; lateral oxidation; performance characteristics; threshold current; vertical cavity surface emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971162
