• DocumentCode
    1323309
  • Title

    High T0(140 K) and low-threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates

  • Author

    Otsubo, K. ; Shoji, H. ; Kusunoki, T. ; Suzuki, T. ; Uchida, T. ; Nishjima, Y. ; Nakajima, K. ; Ishikawa, H.

  • Author_Institution
    RWCP Opt. Interconnection Fujitsu Lab., Atsugi, Japan
  • Volume
    33
  • Issue
    21
  • fYear
    1997
  • fDate
    10/9/1997 12:00:00 AM
  • Firstpage
    1795
  • Lastpage
    1797
  • Abstract
    InGaAs-InAlGaAs strained quantum well lasers emitting in the 1.2 μm region have been fabricated on In0.22Ga0.78As ternary substrates. The threshold current density of the laser with highly reflective facets is 176 A/cm 2 at 20°C. The characteristic temperature (T0) of the device has reached 140 K, which is the highest value ever reported for long-wavelength semiconductor lasers
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser transitions; quantum well lasers; 1.2 micron; 140 K; In0.22Ga0.78As; InGaAs ternary substrates; InGaAs-InAlGaAs; high characteristic temperature; highly reflective facets; long-wavelength laser; low-threshold operation; semiconductor lasers; strained quantum well lasers; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971238
  • Filename
    633399
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1323309