Title :
Design criteria of low-power low-noise charge amplifiers in VLSI bipolar technology
Author :
Bertuccio, G. ; Fasoli, L. ; Sampietro, M.
Author_Institution :
Dipt. di Elettronica e Inf., Politecnico di Milano, Italy
fDate :
10/1/1997 12:00:00 AM
Abstract :
The criteria underlying the design of low-noise front-end integrated electronics for radiation and particle detectors have been determined, taking into account the limits in the allowable power dissipation. The analysis specifically treats integrated amplifiers employing silicon bipolar transistors, whose performance has been studied to highlight the ultimate noise limit and the roles of the front-end device parameters such as the current gain, the base spreading resistance, the junction and diffusion capacitances, the transition frequency, and the device geometry. The relationships existing among the power dissipated in the front-end stage, the noise performance, and the characteristic of signal processing are derived
Keywords :
VLSI; amplifiers; analogue processing circuits; bipolar analogue integrated circuits; detector circuits; integrated circuit design; integrated circuit noise; nuclear electronics; VLSI bipolar technology; amplifier noise; analog integrated circuit; base spreading resistance; bipolar transistors; charge measurement; current gain; design criteria; device geometry; diffusion capacitance; front-end device parameters; integrated amplifiers; integrated circuit design; junction capacitance; low-noise front-end integrated electronics; low-power low-noise charge amplifiers; particle detectors; power dissipation; signal processing; silicon bipolar transistors; transition frequency; Bipolar transistors; Capacitance; Frequency; Low-noise amplifiers; Performance analysis; Performance gain; Power dissipation; Radiation detectors; Silicon; Very large scale integration;
Journal_Title :
Nuclear Science, IEEE Transactions on
