Title :
Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
Author :
Tsai, Tsung-Ming ; Chang, Kuan-Chang ; Chang, Ting-Chang ; Syu, Yong-En ; Chuang, Siang-Lan ; Chang, Geng-Wei ; Liu, Guan-Ru ; Chen, Min-Chen ; Huang, Hui-Chun ; Liu, Shih-Kun ; Tai, Ya-Hsiang ; Gan, Der-Shin ; Yang, Ya-Liang ; Young, Tai-Fa ; Tseng, Bae-
Author_Institution :
Dept. of Mater. & Optoelectron. Sci., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan
Abstract :
In this letter, we successfully produced resistive switching behaviors by nickel doped into silicon oxide at room temperature. The nickel element was doped into silicon oxide, which is a useful dielectric material in integrated circuit (IC) industries by cosputtering technology. Based on the proposed method, satisfactory reliability of the resistance switching device can be demonstrated by endurance and retention evaluation. We believe that the silicon oxide doped with nickel at room temperature is a promising method for resistive random access memory nonvolatile memory applications due to its compatibility with the IC processes.
Keywords :
dielectric materials; integrated circuits; nickel; random-access storage; silicon compounds; sputter deposition; switching; IC application; IC process; SiO2:Ni; bipolar resistive RAM characteristics; cosputtering technology; dielectric material; integrated circuit industry; nickel doping; nickel element; reliability; resistance switching device; resistive random access memory nonvolatile memory application; resistive switching property; silicon oxide dielectrics; temperature 293 K to 298 K; Dielectrics; Doping; Nickel; Nonvolatile memory; Resistance; Silicon; Tin; Nonvolatile memory (NVM); nickel; resistive switching; silicon oxide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2217933
