Title :
SOI power devices
Author :
Udrea, F. ; Garner, D. ; Sheng, K. ; Popescu, A. ; Lim, H.T. ; Milne, W.I.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
2/1/2000 12:00:00 AM
Abstract :
This paper provides an introduction to silicon-on-insulator (SOI) technology and the operating principles of high-voltage SOI devices, reviews the performance of the available SOI switching devices in comparison with standard silicon devices, discusses the reasoning behind the use of SOI technology in power applications and covers the most advanced novel power SOI devices proposed to date. The impact of SOI technology on power integrated circuits (PICs) and the problems associated with the integration of high-voltage and low-voltage CMOS are also analysed
Keywords :
CMOS integrated circuits; integrated circuit technology; power integrated circuits; semiconductor technology; silicon; HV CMOS; LV CMOS; SOI power devices; SOI switching devices; SOI technology; Si; high-voltage CMOS; high-voltage SOI devices; low-voltage CMOS; performance; power applications; power integrated circuits; silicon-on-insulator technology; standard silicon devices;
Journal_Title :
Electronics & Communication Engineering Journal
DOI :
10.1049/ecej:20000104
