DocumentCode
1323680
Title
SOI power devices
Author
Udrea, F. ; Garner, D. ; Sheng, K. ; Popescu, A. ; Lim, H.T. ; Milne, W.I.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
12
Issue
1
fYear
2000
fDate
2/1/2000 12:00:00 AM
Firstpage
27
Lastpage
40
Abstract
This paper provides an introduction to silicon-on-insulator (SOI) technology and the operating principles of high-voltage SOI devices, reviews the performance of the available SOI switching devices in comparison with standard silicon devices, discusses the reasoning behind the use of SOI technology in power applications and covers the most advanced novel power SOI devices proposed to date. The impact of SOI technology on power integrated circuits (PICs) and the problems associated with the integration of high-voltage and low-voltage CMOS are also analysed
Keywords
CMOS integrated circuits; integrated circuit technology; power integrated circuits; semiconductor technology; silicon; HV CMOS; LV CMOS; SOI power devices; SOI switching devices; SOI technology; Si; high-voltage CMOS; high-voltage SOI devices; low-voltage CMOS; performance; power applications; power integrated circuits; silicon-on-insulator technology; standard silicon devices;
fLanguage
English
Journal_Title
Electronics & Communication Engineering Journal
Publisher
iet
ISSN
0954-0695
Type
jour
DOI
10.1049/ecej:20000104
Filename
836519
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