DocumentCode :
1323689
Title :
High-Performance a-IGZO Thin-Film Transistor Using 
Gate Dielectric
Author :
Chiu, C.J. ; Chang, S.P. ; Chang, S.J.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
31
Issue :
11
fYear :
2010
Firstpage :
1245
Lastpage :
1247
Abstract :
In this letter, we report the fabrication of an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor with a high-k dielectric layer on a glass substrate. The room-temperature-deposited a-IGZO channel with Ta2O5 exhibits the following operating characteristics: a threshold voltage of 0.25 V, a drain-source current on/off ratio of 105, a subthreshold gate voltage swing of 0.61 V/decade, and a high field-effect mobility of 61.5 cm2/V·s; these characteristics make it suitable for use as a switching transistor and in low-power applications.
Keywords :
dielectric materials; tantalum compounds; thin film transistors; Ta2O5; a-IGZO thin-film transistor; amorphous indium gallium zinc oxide; fabrication; field-effect mobility; gate dielectric; high-k dielectric layer; voltage 0.25 V; Capacitance; Dielectrics; Indium gallium zinc oxide; Logic gates; Thin film transistors; Threshold voltage; $ hbox{Ta}_{2}hbox{O}_{5}$ $k$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2066951
Filename :
5570921
Link To Document :
