Title :
Testing the Temperature Limits of GaN-Based HEMT Devices
Author :
Maier, David ; Alomari, Mohammed ; Grandjean, Nicolas ; Carlin, Jean-Francois ; Diforte-Poisson, Marie-Antoinette ; Dua, Christian ; Chuvilin, Andrey ; Troadec, David ; Gaquiére, Christophe ; Kaiser, Ute ; Delage, Sylvain L. ; Kohn, Erhard
Author_Institution :
Inst. of Electron Devices & Circuits, Univ. of Ulm, Ulm, Germany
Abstract :
The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500°C, InAlN/GaN HEMTs have been operated up to 900°C for 50 h (in vacuum). Failure is thought to be still contact metallization stability related, indicating an extremely robust InAlN/GaN heterostructure configuration.
Keywords :
high electron mobility transistors; thermal stability; HEMT device; high-electron mobility transistor; lattice-matched heterostructure FET; stepped temperature test routine; still contact metallization stability; temperature limit testing; temperature stability; time 50 h; GaN heterostructures; InAlN/GaN high-electron mobility transistor (HEMT); high-temperature electronics; reliability;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2010.2072507
