Testing the Temperature Limits of GaN-Based HEMT Devices

Author

Maier, David ; Alomari, Mohammed ; Grandjean, Nicolas ; Carlin, Jean-Francois ; Diforte-Poisson, Marie-Antoinette ; Dua, Christian ; Chuvilin, Andrey ; Troadec, David ; Gaquiére, Christophe ; Kaiser, Ute ; Delage, Sylvain L. ; Kohn, Erhard

Author_Institution

Inst. of Electron Devices & Circuits, Univ. of Ulm, Ulm, Germany

Volume

10

Issue

4

fYear

2010

Firstpage

427

Lastpage

436

Abstract

The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500°C, InAlN/GaN HEMTs have been operated up to 900°C for 50 h (in vacuum). Failure is thought to be still contact metallization stability related, indicating an extremely robust InAlN/GaN heterostructure configuration.

Keywords

high electron mobility transistors; thermal stability; HEMT device; high-electron mobility transistor; lattice-matched heterostructure FET; stepped temperature test routine; still contact metallization stability; temperature limit testing; temperature stability; time 50 h; GaN heterostructures; InAlN/GaN high-electron mobility transistor (HEMT); high-temperature electronics; reliability;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2010.2072507

Filename

5570933